Donor-doping characteristics of gas-source molecular beam epitaxial Si and Si1-xGex using phosphine
نویسندگان
چکیده
Well-behaved and reproducible n-type doping of Si and Sir -$e, by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017-10’9 cmp3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The doping profiles are well defined’in both Si and Sir-,Ge, layers. A p-Sia9Ge&z-Si heterojunction diode made with boron and phosphine doping has demonstrated excellent rectifying characteristics.
منابع مشابه
Advances in Natural Sciences: Nanoscience and Nanotechnology
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